Methods for improving the high current performance of static induction transistor ( SIT) are presented. 描述了改善静电感应晶体管(SIT)大电流特性的新方法。
The Manufacture and Research on the Operational Properties of Organic Static Induction Transistor 有机静电感应晶体管的制作及特性研究
First, according to the actual organic static induction transistor establishing the physical model and selecting appropriate structure parameters, solves poisson's equation by adopting finite element method. 首先根据实际制作的有机静电感应三极管建立物理模型,选取合适的结构参数,采用有限元法求解泊松方程。
The gate source breakdown performance of static induction transistor was studied experimentally. 对静电感应器件的栅源击穿特性做了实验研究。
The Control on High Frequency Power Parameter of the Static Induction Transistor 静电感应晶体管高频功率参数的控制
A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential. 针对埋栅型静电感应晶体管(SIT)提出一种柱栅模型.用镜像法计算了器件内电势分布,并在此基础上计算了沟道势垒、栅效率、电压放大因子等。
Static Induction Transistor Up Converter with High Linearity and Large Output 高线性大输出的静电感应晶体管上变频器
Temperature Property of Bipolar Static Induction Transistor 双极型静电感应晶体管的温度特性
Analytical Model of the Blocking State of Surface Gate Static Induction Transistor 平面栅静电感应晶体管阻断状态解析模型
Preparation and Characteristics of Organic Semiconductor Static Induction Transistor Using Thin Film Al Gate 薄膜铝栅极有机半导体静电感应三极管的试制及动作特性
In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction. 为了理解有机静电感应三极管的肖特基栅极原理,本文在第二章阐述了PN结和肖特基结的特性。
In the paper the recent development of static induction transistor, charge modulation devices, buck charge modulated device, base stored image sensor, amplified MOS image and CMOS active pixel sensors are emphatically described. 主要介绍静电感应晶体管、电荷调制器件、体电荷调制器件、基极存储图象传感器、增强MOS图象、CMOS等有源象素图象传感器的新进展。
This paper describes a high-frequency and high-power induction heating inverter by using Static induction Transistor ( SIT), and proposes the technique of choosing and controlling of SIT. 本文简述了静电感应晶体管(SIT)大功率感应加热电源的研究成果。着重介绍了SIT的参数选择及控制方法。
Dynamic Characteristics of Organic Static Induction Transistor 基于实验结果的有机静电感应三极管动态特性
The paper describes a silent voltage source PWM frequency converter. Its main circuit uses novel full controlled devices bipolar static induction transistor ( BSIT) and static induction thyristor ( SITH). 介绍一种电压型PWM静音式变频器,其主电路选用新型全控型器件&双极型静电感应晶体管(BSIT)和静电感应晶闸管(SITH)。
The relation ship between operation characteristics and structure of a schottky type gate electrode organic static induction transistor with Au/ CuPc/ Al/ CuPc/ Au sandwich structure is analyzed. 根据Au/CuPc/Al/CuPc/Au三明治结构的肖特基型栅极有机静电感应三极管的测试结果,分析了该三极管动作特性与器件结构的关系。
Analysis of the Influence of Changing Gate Length on the Operation Characteristic of Organic Static Induction Transistor 栅极长度变化对有机静电感应晶体管工作特性影响解析
A New-Type a-Si: H Static Induction Transistor 一种新型的a-Si:H静电感应晶体管
The static induction transistor with Schottky gate and sandwich structure of Au/ CuPc/ Al/ CuPc/ Au using organic semiconductor material copper phthalocyanine was discussed. 介绍了由有机半导体材料酞菁铜制作的具有Au/CuPc/Al/CuPc/Au三明治结构的肖特基型栅极有机静电感应三极管。
The main work of this thesis analyzes the organic static induction transistor's operational mechanism, and researchs the change of gate length, change of gate-drain distance and change of electric channel breadth for operational characteristics influence of organic static induction transistor. 本论文的主要工作是解析有机静电感应三极管的工作机理,并研究了栅极长度变化、栅漏极间距变化和导电沟道的宽度变化对有机静电感应三极管工作特性的影响。
In addition, we designed the new device structure, the new layout and the new flow of the Static Induction Transistor ( SIT). 此外,对静电感应晶体管(SIT)的结构设计、版图设计和工艺流程设计也进行了深入的研究。
According to the test results of an organic static induction transistor by organic semiconductive copper-phthalocyanine, numerical simulation is conducted to analyze and evaluate its operation mechanism and electrical property with an electric circuit model. 根据采用有机半导体材料酞菁铜制作的有机静电感应三极管的测试结果,使用适当电路模型和数学工具,进行数值仿真解析,对其动作机理和电气特性进行了解析和评价。
Research on the Operating Characteristics of Organic Static Induction Transistor with Copper-Phthalocyanine Film 酞菁铜有机静电感应三极管动作特性研究
Using ion implantation doping on the gate and the source region in order to get a better grid-controlled performance, combined with the process experiment, the process parameters were determined. A comprehensive test on electrical parameters for low-power static induction transistor was conducted. 采用离子注入技术对栅区和源区进行掺杂,以获得良好的栅控性能,结合工艺实验,确定了各环节工艺参数。
Static induction transistor ( SIT) is a new type of power device. 静电感应晶体管(SIT)是一类新型功率器件。